%0 Conference Paper
%A Hamid, N.H.
%A Murray, A.F.
%A Laurenson, D.
%A Roy, S.
%A Cheng, B.
%D 2005
%F scholars:2
%K MOS technology; Mosfet model; MOSFETs; N-channel; Probabilistic computing; Restricted boltzmann machine; Stochastic behavior; Submicrometer, Electric load management; Frequency multiplying circuits; MATLAB; Micrometers; MOSFET devices; Random processes, Stochastic models
%P 2510-2513
%R 10.1109/ISCAS.2005.1465136
%T Probabilistic computing with future deep sub-micrometer devices : A modelling approach
%U https://khub.utp.edu.my/scholars/2/
%X An approach is described that investigates the potential of probabilistic "neural" architectures for computation with Deep Sub-Micrometer (DSM) MOSFETs. Initially, noisy MOSFET models are based upon those for a 0.35μm MOS technology with an exaggerated 1/f characteristic. We explore the manifestation of the 1/f characteristic at the output of 2-quadrant multiplier when the key n-channel MOSFETs are replaced by "noisy" MOSFETs. The stochastic behavior of this noisy multiplier has been mapped on to a software (Matlab) model of a Continuous Restricted Boltzmann Machine (CRBM) - an analogue-input stochastic computing structure. Simulation of this DSM CRBM implementation shows little degradation from that of a "perfect" CRBM. This paper thus introduces a methodology for a form of "technology-downstreaming" and highlights the potential of probabilistic architectures for DSM computation. © 2005 IEEE.
%Z cited By 3; Conference of IEEE International Symposium on Circuits and Systems 2005, ISCAS 2005 ; Conference Date: 23 May 2005 Through 26 May 2005; Conference Code:77312