@inproceedings{scholars2, address = {Kobe}, title = {Probabilistic computing with future deep sub-micrometer devices : A modelling approach}, journal = {Proceedings - IEEE International Symposium on Circuits and Systems}, pages = {2510--2513}, note = {cited By 3; Conference of IEEE International Symposium on Circuits and Systems 2005, ISCAS 2005 ; Conference Date: 23 May 2005 Through 26 May 2005; Conference Code:77312}, doi = {10.1109/ISCAS.2005.1465136}, year = {2005}, abstract = {An approach is described that investigates the potential of probabilistic "neural" architectures for computation with Deep Sub-Micrometer (DSM) MOSFETs. Initially, noisy MOSFET models are based upon those for a 0.35{\^I}1/4m MOS technology with an exaggerated 1/f characteristic. We explore the manifestation of the 1/f characteristic at the output of 2-quadrant multiplier when the key n-channel MOSFETs are replaced by "noisy" MOSFETs. The stochastic behavior of this noisy multiplier has been mapped on to a software (Matlab) model of a Continuous Restricted Boltzmann Machine (CRBM) - an analogue-input stochastic computing structure. Simulation of this DSM CRBM implementation shows little degradation from that of a "perfect" CRBM. This paper thus introduces a methodology for a form of "technology-downstreaming" and highlights the potential of probabilistic architectures for DSM computation. {\^A}{\copyright} 2005 IEEE.}, url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-42949129603&doi=10.1109\%2fISCAS.2005.1465136&partnerID=40&md5=20e8c5d6943a9041fa79b586befa3b2a}, keywords = {MOS technology; Mosfet model; MOSFETs; N-channel; Probabilistic computing; Restricted boltzmann machine; Stochastic behavior; Submicrometer, Electric load management; Frequency multiplying circuits; MATLAB; Micrometers; MOSFET devices; Random processes, Stochastic models}, author = {Hamid, N. H. and Murray, A. F. and Laurenson, D. and Roy, S. and Cheng, B.}, issn = {02714310} }