eprintid: 1973
rev_number: 2
eprint_status: archive
userid: 1
dir: disk0/00/00/19/73
datestamp: 2023-11-09 15:50:08
lastmod: 2023-11-09 15:50:08
status_changed: 2023-11-09 15:41:44
type: conference_item
metadata_visibility: show
creators_name: Abdul Latif, M.A.
creators_name: Zain Ali, N.B.
creators_name: Hussin, F.A.
title: IDVP (intra-die variation probe) for system-on-chip (SoC) infant mortality screen
ispublished: pub
keywords: Automated test equipment; Burn-in; Channel length; Electrical tests; IDVP; Infant Mortality; NBTI; Negative bias temperature instability; Process Technologies; Process Variation; Production flows; Reliability screens; System-on-a-chip; System-On-Chip; Ultra-small, Application specific integrated circuits; Dies; Integrated circuit testing; Integrated circuits; Microprocessor chips; Probes; Reliability; Testing, Programmable logic controllers
note: cited By 1; Conference of 2011 IEEE International Symposium of Circuits and Systems, ISCAS 2011 ; Conference Date: 15 May 2011 Through 18 May 2011; Conference Code:85731
abstract: Used materials, oxides thicknesses, and ultra-small channel lengths are contributors to the impact of well known reliability issue such as NBTI (Negative Bias Temperature Instability). This paper describes a case study using an Intra-Die Variation Probe (IDVP) test to screen out Infant Mortality (IM) failures. The approach is pursued by applying the learning of yield and reliability on 45 nm process technology for the System-On-A-Chip (SoC) products. Using this approach, the IDVP test is determined as a better reliability screen than the Electrical Test (E-Test), due to poor E-Test coverage in the Gross Failure Area (GFA). It has been revealed that the GFA only becomes visible after Burn In stress and we found that the IM failures are a mixture of post-stress Automated Test Equipment (ATE) failures. This approach will produce an outgoing level of quality that enables the 45 nm SoC products to reduce burn-in sampling in the production flow and will be proliferated to the 32 nm process technology products. © 2011 IEEE.
date: 2011
official_url: https://www.scopus.com/inward/record.uri?eid=2-s2.0-79960870879&doi=10.1109%2fISCAS.2011.5938001&partnerID=40&md5=b3c291867a4d1067b3eeb16629098d65
id_number: 10.1109/ISCAS.2011.5938001
full_text_status: none
publication: Proceedings - IEEE International Symposium on Circuits and Systems
place_of_pub: Rio de Janeiro
pagerange: 2055-2058
refereed: TRUE
isbn: 9781424494736
issn: 02714310
citation:   Abdul Latif, M.A. and Zain Ali, N.B. and Hussin, F.A.  (2011) IDVP (intra-die variation probe) for system-on-chip (SoC) infant mortality screen.  In: UNSPECIFIED.