TY  - CONF
TI  - Investigation of RF Sputtering Power Effects on Tungsten Disulfide Thin Films for Enhanced Photovoltaic Performance
KW  - Carrier concentration; Field emission microscopes; Glass substrates; Lime; Magnetron sputtering; Morphology; Photovoltaic effects; Scanning electron microscopy; Sulfur compounds; Surface morphology; Surface roughness; Tungsten compounds; X ray diffraction
KW  -  Deposition power; Photovoltaic performance; Power effects; R.F. magnetron sputtering; RF sputtering; Room temperature growth; Soda lime glass substrate; Sputtering power; Thin-films; Tungsten disulphide (WS2)
KW  -  Thin films
Y1  - 2023///
N2  - This study investigates the impact of deposition power on WS2 thin films grown on soda lime glass substrates using RF magnetron sputtering at room temperature. Variations in structural, morphological, and electrical properties are examined to understand the influence of thermal energy changes during growth. Characterization techniques include X-ray diffraction (XRD) for crystalline structure, field emission scanning electron microscopy (FESEM) for surface morphology, and Hall effect measurements for electrical properties. XRD analysis reveals two prominent WS2 peaks at 2θ = 34.30° and 2θ = 60.88° corresponding to (100)HEX and (110)HEX reflection planes, respectively. Film thickness ranges from 156.3 nm to 908.1 nm, yielding smooth and dense surface morphology. Bulk carrier concentration falls within the 1018 /cm3 range, with a minimum resistivity of 1.27 x 10-1 Ω.cm observed for 200 W deposition. Optimal S/W ratios closely resemble the WS2 structure for films deposited at 200 W. Additionally, an AFM analysis showcases low average surface roughness at 1.68 nm. By exploring the effects of deposition power on WS2 thin films, this research enhances our understanding of their structural, morphological, and electrical characteristics, with implications for potential photovoltaic applications. © 2023 IEEE.
EP  - 16
ID  - scholars18985
UR  - https://www.scopus.com/inward/record.uri?eid=2-s2.0-85182737849&doi=10.1109%2fSENNANO57767.2023.10352561&partnerID=40&md5=8bf6e0b9a14ca150245e266483b3a305
N1  - cited By 0; Conference of 2023 IEEE International Conference on Sensors and Nanotechnology, SENNANO 2023 ; Conference Date: 26 September 2023 Through 27 September 2023; Conference Code:195657
A1  - Rashid, H.
A1  - Amin, N.
A1  - Ali Al-Mahbashi, A.Y.
A1  - Mohd Nawi, I.B.
AV  - none
SP  - 13
ER  -