relation: https://khub.utp.edu.my/scholars/18985/
title: Investigation of RF Sputtering Power Effects on Tungsten Disulfide Thin Films for Enhanced Photovoltaic Performance
creator: Rashid, H.
creator: Amin, N.
creator: Ali Al-Mahbashi, A.Y.
creator: Mohd Nawi, I.B.
description: This study investigates the impact of deposition power on WS2 thin films grown on soda lime glass substrates using RF magnetron sputtering at room temperature. Variations in structural, morphological, and electrical properties are examined to understand the influence of thermal energy changes during growth. Characterization techniques include X-ray diffraction (XRD) for crystalline structure, field emission scanning electron microscopy (FESEM) for surface morphology, and Hall effect measurements for electrical properties. XRD analysis reveals two prominent WS2 peaks at 2θ = 34.30° and 2θ = 60.88° corresponding to (100)HEX and (110)HEX reflection planes, respectively. Film thickness ranges from 156.3 nm to 908.1 nm, yielding smooth and dense surface morphology. Bulk carrier concentration falls within the 1018 /cm3 range, with a minimum resistivity of 1.27 x 10-1 Ω.cm observed for 200 W deposition. Optimal S/W ratios closely resemble the WS2 structure for films deposited at 200 W. Additionally, an AFM analysis showcases low average surface roughness at 1.68 nm. By exploring the effects of deposition power on WS2 thin films, this research enhances our understanding of their structural, morphological, and electrical characteristics, with implications for potential photovoltaic applications. © 2023 IEEE.
date: 2023
type: Conference or Workshop Item
type: PeerReviewed
identifier:   Rashid, H. and Amin, N. and Ali Al-Mahbashi, A.Y. and Mohd Nawi, I.B.  (2023) Investigation of RF Sputtering Power Effects on Tungsten Disulfide Thin Films for Enhanced Photovoltaic Performance.  In: UNSPECIFIED.     
relation: https://www.scopus.com/inward/record.uri?eid=2-s2.0-85182737849&doi=10.1109%2fSENNANO57767.2023.10352561&partnerID=40&md5=8bf6e0b9a14ca150245e266483b3a305
relation: 10.1109/SENNANO57767.2023.10352561
identifier: 10.1109/SENNANO57767.2023.10352561