TY  - CONF
AV  - none
N1  - cited By 0; Conference of 2023 IEEE International Conference on Sensors and Nanotechnology, SENNANO 2023 ; Conference Date: 26 September 2023 Through 27 September 2023; Conference Code:195657
N2  - RRAM has garnered significant attention from various perspectives; however, certain barriers hinder its widespread adoption. These challenges revolve around reliability and power operation, making their resolution crucial. This work highlights the effects of operating at high voltages (>10V), which also affect other memory technologies, including Flash memory. The study introduces an insightful approach involving voltage flow analysis coupled with exploring the fundamental thermal energy flow in ZnO-based RRAM stacks operating within 1.2V. The model adopts a two-dimensional arrangement in COMSOL Multiphysics and further employs MATLAB (LiveLinkTM). The research delves into the dynamic resistance switching process, elucidating the role of joule heating effects, field-driven ion transport, and the temperature influence when the operating voltage exceeds 1.2V, as depicted in various plots. This investigation advances our comprehension of the complex dynamics involved in RRAM operation and demonstrates methods to enhance device performance, improve reliability, and ensure long-term functionality in practical applications. © 2023 IEEE.
KW  - Energy efficiency; Flash memory; II-VI semiconductors; MATLAB; RRAM
KW  -  Flow analysis; High-voltages; Memory technology; Multi-physics; Power operation; RRAM operation; Simulation; Thermal energy flow; Two-dimensional; ZnO-based RRAM
KW  -  Zinc oxide
ID  - scholars18978
SP  - 150
TI  - Enhancing Energy Efficiency: Statistical Analysis of RRAM Operations using ZnO-based Approach
Y1  - 2023///
UR  - https://www.scopus.com/inward/record.uri?eid=2-s2.0-85182747810&doi=10.1109%2fSENNANO57767.2023.10352520&partnerID=40&md5=17d9927d62c27eeab419282656e088bf
A1  - Bature, U.I.
A1  - Mohd Nawi, I.
A1  - Md Khir, M.H.
A1  - Ba Hashwan, S.S.
A1  - Zahoor, F.
A1  - Rahman, M.O.
EP  - 153
ER  -