eprintid: 17098
rev_number: 2
eprint_status: archive
userid: 1
dir: disk0/00/01/70/98
datestamp: 2023-12-19 03:23:33
lastmod: 2023-12-19 03:23:33
status_changed: 2023-12-19 03:07:27
type: article
metadata_visibility: show
creators_name: Bature, U.I.
creators_name: Nawi, I.M.
creators_name: Khir, M.H.M.
creators_name: Zahoor, F.
creators_name: Algamili, A.S.
creators_name: Hashwan, S.S.B.
creators_name: Zakariya, M.A.
title: Statistical Simulation of the Switching Mechanism in ZnO-Based RRAM Devices
ispublished: pub
keywords: Dielectric materials; Free energy; Heat transfer; RRAM; Structural optimization; Zinc oxide, COMSOL simulation; Conductive filaments; Heat energy; Laws of thermodynamics; Operation voltage; Random access memory; Statistical simulation; Switching mechanism; Thermodynamic process; ZnO resistive random access memory, II-VI semiconductors
note: cited By 3
abstract: Resistive random access memory (RRAM) has two distinct processes, the SET and RESET processes, that control the formation and dissolution of conductive filament, respectively. The laws of thermodynamics state that these processes correspond to the lowest possible level of free energy. In an RRAM device, a high operating voltage causes device degradation, such as bends, cracks, or bubble-like patterns. In this work, we developed a statistical simulation of the switching mechanism in a ZnO-based RRAM. The model used field-driven ion migration and temperature effects to design a ZnO-based RRAM dynamic SET and RESET resistance transition process. We observed that heat transport within the conducting filament generated a great deal of heat energy due to the carrier transport of the constituent dielectric material. The model was implemented using the built-in COMSOL Multiphysics software to address heat transfer, electrostatic, and yield RRAM energy. The heat energy increased with the increase in the operating power. Hence, the reliability of a device with high power consumption cannot be assured. We obtained various carrier heat analyses in 2D images and concluded that developing RRAM devices with low operating currents through material and structure optimization is crucial. © 2022 by the authors. Licensee MDPI, Basel, Switzerland.
date: 2022
publisher: MDPI
official_url: https://www.scopus.com/inward/record.uri?eid=2-s2.0-85124964825&doi=10.3390%2fma15031205&partnerID=40&md5=f524e38844995f7a200366c87308e9ff
id_number: 10.3390/ma15031205
full_text_status: none
publication: Materials
volume: 15
number: 3
refereed: TRUE
issn: 19961944
citation:   Bature, U.I. and Nawi, I.M. and Khir, M.H.M. and Zahoor, F. and Algamili, A.S. and Hashwan, S.S.B. and Zakariya, M.A.  (2022) Statistical Simulation of the Switching Mechanism in ZnO-Based RRAM Devices.  Materials, 15 (3).   ISSN 19961944