eprintid: 15713
rev_number: 2
eprint_status: archive
userid: 1
dir: disk0/00/01/57/13
datestamp: 2023-11-10 03:30:20
lastmod: 2023-11-10 03:30:20
status_changed: 2023-11-10 02:00:11
type: article
metadata_visibility: show
creators_name: Isyaku, U.B.
creators_name: Khir, M.H.B.M.
creators_name: Nawi, I.M.
creators_name: Zakariya, M.A.
creators_name: Zahoor, F.
title: ZnO Based Resistive Random Access Memory Device: A Prospective Multifunctional Next-Generation Memory
ispublished: pub
keywords: Biomimetics; Cognitive systems; Electrodes; Hybrid materials; Oxide minerals; Point defects; RRAM; Zinc oxide, Computational system; Fabrication technique; Interfacial layer; Multi-layered structure; Native point defects; Resistive random access memory; Switching dynamics; Switching properties, II-VI semiconductors
note: cited By 17
abstract: Numerous works that have demonstrated the study and enhancement of switching properties of ZnO-based RRAM devices are discussed. Several native point defects that have a direct or indirect effect on ZnO are discussed. The use of doping elements, multi-layered structures, suitable bottom and top electrodes, controlling the deposition materials, and the impact of hybrid structure for enhancing the switching dynamics are discussed. The potentials of ZnO-based RRAM for invisible and bendable devices are also covered. ZnO-based RRAM has the potential for possible application in bio-inspired cognitive computational systems. Thus, the synapse capability of ZnO is presented. The sneak-path current issue also besets ZnO-based RRAM crossbar array architecture. Hence, various attempts to subdue the bottleneck have been shown and discussed in this article. Interestingly, ZnO provides not only helpful memory features. However, it demonstrates the ability to be used in nonvolatile multifunctional memory devices. Also, this review covers various issues like the effect of electrodes, interfacial layers, proper switching layers, appropriate fabrication techniques, and proper annealing settings. These may offer a valuable understanding of the study and development of ZnO-based RRAM and should be an avenue for overcoming RRAM challenges. © 2013 IEEE.
date: 2021
publisher: Institute of Electrical and Electronics Engineers Inc.
official_url: https://www.scopus.com/inward/record.uri?eid=2-s2.0-85111024999&doi=10.1109%2fACCESS.2021.3098061&partnerID=40&md5=3f182c311c6eb12aeef756a7e40ed14f
id_number: 10.1109/ACCESS.2021.3098061
full_text_status: none
publication: IEEE Access
volume: 9
pagerange: 105012-105047
refereed: TRUE
issn: 21693536
citation:   Isyaku, U.B. and Khir, M.H.B.M. and Nawi, I.M. and Zakariya, M.A. and Zahoor, F.  (2021) ZnO Based Resistive Random Access Memory Device: A Prospective Multifunctional Next-Generation Memory.  IEEE Access, 9.  pp. 105012-105047.  ISSN 21693536