eprintid: 15480
rev_number: 2
eprint_status: archive
userid: 1
dir: disk0/00/01/54/80
datestamp: 2023-11-10 03:30:06
lastmod: 2023-11-10 03:30:06
status_changed: 2023-11-10 01:59:35
type: conference_item
metadata_visibility: show
creators_name: Alabsi, S.S.
creators_name: Khir, M.H.M.
creators_name: Saheed, M.S.M.
creators_name: Dennis, J.O.
creators_name: Ahmed, A.Y.
title: Contact Resistance of Metal-CNT Contacts in Field Effect Based Sensors
ispublished: pub
keywords: Contact resistance; Drain current; Electrodes; Energy gap; Threshold voltage, CNT diameter; Contact length; Field-effect; In-field; Metal electrodes; Nano scale; Nano-devices; Physical parameters; Semiconducting carbon nanotubes; Sensor development, Carbon nanotubes
note: cited By 1; Conference of 8th International Conference on Intelligent and Advanced Systems, ICIAS 2021 ; Conference Date: 13 July 2021 Through 15 July 2021; Conference Code:175661
abstract: Contact engineering is a very crucial area of sensor development. This is especially true when dealing with devices at the very small micro and nano scale. Field effect-based sensors implementing nanodevices as channel material are amenable to extreme device miniaturization. Semiconducting carbon nanotubes (sc-CNTs) are exceptionally promising for FET-channel integration to replace bulky silicon technology beyond the dimensions of the short channel effects for their ID ultrathin structure, and superior mechanical and electronic features. However, the inhomogeneous contact between metal electrodes and the sc-CNT is amounting at relatively high contact resistance. In this paper, the effect of variation of certain physical parameters on electronic features was mathematically investigated using Y-Function Method (YFM) equations. Two physical parameters; CNT diameter and contact length, were varied in a range of set values. Results show that lower band gap energy and threshold voltage are obtained with larger CNT diameters, while increasing contact length have a significant reduction effect on contact resistance. In addition, the effect of contact resistance on sensor's performance in terms of drain current and the transconductance was also demonstrated. © 2021 IEEE.
date: 2021
publisher: Institute of Electrical and Electronics Engineers Inc.
official_url: https://www.scopus.com/inward/record.uri?eid=2-s2.0-85124136525&doi=10.1109%2fICIAS49414.2021.9642660&partnerID=40&md5=1da73ec3b52d5780568b77b18408130b
id_number: 10.1109/ICIAS49414.2021.9642660
full_text_status: none
publication: International Conference on Intelligent and Advanced Systems: Enhance the Present for a Sustainable Future, ICIAS 2021
refereed: TRUE
isbn: 9781728176666
citation:   Alabsi, S.S. and Khir, M.H.M. and Saheed, M.S.M. and Dennis, J.O. and Ahmed, A.Y.  (2021) Contact Resistance of Metal-CNT Contacts in Field Effect Based Sensors.  In: UNSPECIFIED.