relation: https://khub.utp.edu.my/scholars/14652/
title: Formation and characterization of holmium oxide on germanium-based metal-oxide-semiconductor capacitor
creator: Onik, T.A.M.
creator: Hawari, H.F.
creator: Sabri, M.F.M.
creator: Wong, Y.H.
description: The influence of different thermal oxidation/nitridation durations (5, 10, 15, and 20 minutes) at 400°C for transforming metallic Ho sputtered on Ge substrate in N2O gas ambient have been systemically investigated to develop Ho2O3/Ge based on metal-oxide-semiconductor (MOS) device. The structural and chemical properties of the film were characterized using X-ray diffraction spectroscopy, X-ray photoelectron spectroscopy (XPS), and high-resolution transmission electron microscopy. Cubic-Ho2O3 dielectric layer has been formed along with sandwiched interfacial layer (IL) between substrate Ge and high-k interface comprising tetragonal-GeO2, GeOx, and cubic-Ge3N4 compounds. Energy band alignment for Ho2O3/IL/Ge MOS stack has been determined from XPS spectrum where 10-minute sample exhibited maximum conduction band offset, �Ec ~ 2.47 eV and valance band offset, �Ev ~ 4.67 eV, inducing lower leakage current density, J ~ 10�5 A cm�2 at the higher electrical breakdown, EBD ~ 8.59 MV cm�1. The electrical results of this sample also revealed higher dielectric constant k ~ 13.60, lowest effective oxide charge, slow trap density, and interface trap density which has been attributed to the confinement of Ho2O3 dielectric interface and densification Ge3N4 interfacial compound. An oxidation/nitridation model related to Ho2O3/IL/Ge stack growth is being proposed. It has been anticipated that Ho2O3 could serve as a gate dielectric oxide for Ge-based MOS systems such as a capacitor. © 2021 John Wiley & Sons Ltd.
publisher: John Wiley and Sons Ltd
date: 2021
type: Article
type: PeerReviewed
identifier:   Onik, T.A.M. and Hawari, H.F. and Sabri, M.F.M. and Wong, Y.H.  (2021) Formation and characterization of holmium oxide on germanium-based metal-oxide-semiconductor capacitor.  International Journal of Energy Research, 45 (10).  pp. 14761-14779.  ISSN 0363907X     
relation: https://www.scopus.com/inward/record.uri?eid=2-s2.0-85104266304&doi=10.1002%2fer.6752&partnerID=40&md5=d42eea2764422d3383756b51c44ac24a
relation: 10.1002/er.6752
identifier: 10.1002/er.6752