TY  - JOUR
AV  - none
UR  - https://www.scopus.com/inward/record.uri?eid=2-s2.0-85117953614&doi=10.3390%2fmolecules26216424&partnerID=40&md5=8657ff091222bb887bfe9263d8a7acc4
JF  - Molecules
VL  - 26
N2  - Graphene as a material for optoelectronic design applications has been significantly re-stricted owing to zero bandgap and non-compatible handling procedures compared with regular microelectronic ones. In this work, nitrogen-doped reduced graphene oxide (N-rGO) with tunable optical bandgap and enhanced electrical conductivity was synthesized via a microwave-assisted hydrothermal method. The properties of the synthesized N-rGO were determined using XPS, FTIR and Raman spectroscopy, UV/vis, as well as FESEM techniques. The UV/vis spectroscopic analysis confirmed the narrowness of the optical bandgap from 3.4 to 3.1, 2.5, and 2.2 eV in N-rGO samples, where N-rGO samples were synthesized with a nitrogen doping concentration of 2.80, 4.53, and 5.51 at.. Besides, an enhanced n-type electrical conductivity in N-rGO was observed in Hall effect mea-surement. The observed tunable optoelectrical characteristics of N-rGO make it a suitable material for developing future optoelectronic devices at the nanoscale. © 2021 by the authors. Licensee MDPI, Basel, Switzerland.
PB  - MDPI
IS  - 21
N1  - cited By 14
Y1  - 2021///
A1  - Witjaksono, G.
A1  - Junaid, M.
A1  - Khir, M.H.
A1  - Ullah, Z.
A1  - Tansu, N.
A1  - Saheed, M.S.B.M.
A1  - Siddiqui, M.A.
A1  - Ba-Hashwan, S.S.
A1  - Algamili, A.S.
A1  - Magsi, S.A.
A1  - Aslam, M.Z.
A1  - Nawaz, R.
ID  - scholars14308
SN  - 14203049
TI  - Effect of nitrogen doping on the optical bandgap and electrical conductivity of nitrogen-doped reduced graphene oxide
ER  -