%0 Journal Article
%@ 20796412
%A Zaine, S.N.A.
%A Mohamed, N.M.
%A Khatani, M.
%A Shahid, M.U.
%D 2021
%F scholars:14148
%I MDPI
%J Coatings
%N 12
%R 10.3390/coatings11121442
%T Enhancement of charge transport of a dye-sensitized solar cell utilizing tio2 quantum dot photoelectrode film
%U https://khub.utp.edu.my/scholars/14148/
%V 11
%X A dye-sensitized solar cell (DSC) is the third generation of solar technology, utilizing TiO2 nanoparticles with sizes of 20�30 nm as the photoelectrode material. The integration of smaller nanoparticles has the advantage of providing a larger surface area, yet the presence of grain boundaries is inevitable, resulting in a higher probability of electron trapping. This study reports on the improvement of charge transport through the integration of quantum dot (QD) TiO2 with a size of less than 10 nm as the dye absorption photoelectrode layer. The QD TiO2 samples were synthesized through sol�gel and reflux methods in a controlled pH solution without surfactants. The synthesized samples were analyzed using microscopic, diffraction, absorption, as well as spectroscopic analyses. A current�voltage and impedance analysis was used to evaluate the performance of a DSC integrated with synthesized TiO2 as the photoelectrode material. The sample with smaller crystallite structures led to a large surface area and exhibited a higher dye absorption capability. Interestingly, a DSC integrated with QD TiO2 showed a higher steady-state electron density and a lower electron recombination rate. The shallow distribution of the trap state led to an improvement of the electron trapping/de-trapping process between the Fermi level and the conduction band of oxide photoelectrode material, hence improving the lifetime of generated electrons and the overall performance of the DSC. © 2021 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https:// creativecommons.org/licenses/by/ 4.0/).
%Z cited By 1