@article{scholars13911,
            year = {2020},
         journal = {IEEE Access},
            note = {cited By 38},
           pages = {69509--69521},
           title = {A Review of Carbon Nanotubes Field Effect-Based Biosensors},
             doi = {10.1109/ACCESS.2020.2987204},
       publisher = {Institute of Electrical and Electronics Engineers Inc.},
          volume = {8},
             url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-85083874539&doi=10.1109\%2fACCESS.2020.2987204&partnerID=40&md5=d54d2c4355c9b8ae8fe31cfb011f60a8},
          author = {Alabsi, S. S. and Ahmed, A. Y. and Dennis, J. O. and Khir, M. H. M. and Algamili, A. S.},
        keywords = {Biocompatibility; Biosensors; Carbon nanotube field effect transistors; Diagnosis; Electrodes; Morphology, Nano-scale materials; Semiconducting carbon nanotubes; Short-channel effect; Silicon Technologies; Source and drain electrodes; Surface-charge modulations; Ultra-thin structures; Ultrasensitive detection, Carbon nanotubes},
        abstract = {Field effect-based biosensors (BioFETs) stand out among other biosensing technologies due to their unique features such as real time screening, ultrasensitive detection, low cost, and amenability to extreme device miniaturization due to the convenient utilization of nanoscale materials. Nanodevices pave the way for the detection of tiny biomolecules and minute concentrations of analytes as they are ultrasensitive to surface charge modulation, allowing for better point-of-care screening of various life-threatening infectious diseases. Semiconducting carbon nanotubes (sc-CNTs) are exceptionally promising for FET-channel integration to replace bulky silicon technology beyond the dimensions of the short channel effects for their 1D ultrathin structure, superior electronic features, and biocompatibility. However, performance of CNTFET biosensors is influenced by the inhomogeneous interface between sc-CNTs and metallic source and drain electrodes. This article reviews recent studies on CNTFET biosensors, morphology of these devices and the cause-and-effect of the interface issues between sc-CNTs and metallic electrodes. Finally, future outlook on suggested technology to improve the performance of such CNTFET devices is presented. {\^A}{\copyright} 2013 IEEE.},
            issn = {21693536}
}