%0 Journal Article
%@ 22918744
%A Dzulkifli, H.
%A Mustapha, M.
%A Sallih, N.
%A Kakooei, S.
%A Mustapha, F.
%D 2020
%F scholars:13883
%I Growing Science
%J Engineering Solid Mechanics
%N 4
%P 381-388
%R 10.5267/j.esm.2020.3.001
%T The effect of reaction temperature on the formation of 2H-SiC and 3C-SiC nanowhiskers
%U https://khub.utp.edu.my/scholars/13883/
%V 8
%X Synthesis of 2H and 3C-polytype silicon carbide nanowhiskers mixture of silicon dioxide and carbon was performed by carbothermal reduction process. The reaction temperature for synthesis of 2H-SiC was varied from 1350 C to 1650 C and for the 3C-SiC this range was varied from 1450 C to 1650 C. Scanning Electron Microscopy (SEM) analyses showed that nanowhiskers structures of both 2H-SiC and 3C-SiC polytypes has a size up to 100 nm in diameters and several microns in length. However, the orientation and pattern of grains were different in both structures. While for 3C-SiC polytype, the shape has been classified as SiC majorly grew along 101 plane by X-ray Diffraction pattern and finalized by Raman shift peaks at 799 and 959 cm-1, the shape of 2H-polytipe silicon carbide was categorized as SiC majorly grown along 111 plane confirmed by Raman shift peak at 799 and 963 cm-1. The mechanism of vapor-gas interaction was also suggested and discussed for both SiC nanowhiskers polytypes. © 2020 Growing Science Ltd. All rights reserved. © 2020 by the authors; licensee Growing Science, Canada.
%Z cited By 1