eprintid: 13390
rev_number: 2
eprint_status: archive
userid: 1
dir: disk0/00/01/33/90
datestamp: 2023-11-10 03:27:57
lastmod: 2023-11-10 03:27:57
status_changed: 2023-11-10 01:51:03
type: article
metadata_visibility: show
creators_name: Krishnamurthy, S.
creators_name: Kannan, R.
creators_name: Hussin, F.A.
title: Single event burnout hardening of trench shielded power UMOSFET using High-κ dielectrics
ispublished: pub
keywords: Aluminum nitride; Dielectric materials; Electric fields; Hardening; Heavy ions; III-V semiconductors; Radiation hardening; Silica; Silicon oxides, Electric field distributions; Electrical characteristic; High-permittivity gate dielectrics; Sensitive area; Single-event burnouts; Two-dimensional numerical simulation, Gate dielectrics
note: cited By 2
abstract: This study proposes the High-κ dielectric Trench Shielded power UMOSFET (HK TS-UMOSFET) to be assessed using the two-dimensional numerical simulations. The simulations are employed to evaluate HK TS-UMOSFETs susceptibility to single-event burnout (SEB) mechanism. Based on the findings, the influence of alternative high permittivity gate dielectrics to silicon dioxide (SiO 2) in TS-UMOSFET was discussed. Furthermore, in order to improve the performance of the device, its electrical behaviour was simulated with several high-κ dielectrics including Al 2 O 3, Si 3 N 4 and Aluminium Nitride (AlN). When heavy ions strike the sensitive areas of the device, the electric field distribution and SEB threshold values were extracted. Based on the values yielded, (AlN) was identified as a promising high-κ material to achieve SEB-hardened TS-UMOSFET compared to the other high-κ dielectrics. In conclusion, with (AlN), the HK TS-UMOSFET offers a high SEB tolerance and improved electrical characteristics. © 2020 The Author(s). Published by IOP Publishing Ltd.
date: 2020
publisher: Institute of Physics Publishing
official_url: https://www.scopus.com/inward/record.uri?eid=2-s2.0-85083498032&doi=10.1088%2f2053-1591%2fab816a&partnerID=40&md5=431173a4fbe5341cf42321ed54fc8934
id_number: 10.1088/2053-1591/ab816a
full_text_status: none
publication: Materials Research Express
volume: 7
number: 3
refereed: TRUE
issn: 20531591
citation:   Krishnamurthy, S. and Kannan, R. and Hussin, F.A.  (2020) Single event burnout hardening of trench shielded power UMOSFET using High-κ dielectrics.  Materials Research Express, 7 (3).   ISSN 20531591