TY  - JOUR
VL  - 7
UR  - https://www.scopus.com/inward/record.uri?eid=2-s2.0-85083498032&doi=10.1088%2f2053-1591%2fab816a&partnerID=40&md5=431173a4fbe5341cf42321ed54fc8934
A1  - Krishnamurthy, S.
A1  - Kannan, R.
A1  - Hussin, F.A.
JF  - Materials Research Express
SN  - 20531591
PB  - Institute of Physics Publishing
Y1  - 2020///
KW  - Aluminum nitride; Dielectric materials; Electric fields; Hardening; Heavy ions; III-V semiconductors; Radiation hardening; Silica; Silicon oxides
KW  -  Electric field distributions; Electrical characteristic; High-permittivity gate dielectrics; Sensitive area; Single-event burnouts; Two-dimensional numerical simulation
KW  -  Gate dielectrics
TI  - Single event burnout hardening of trench shielded power UMOSFET using High-κ dielectrics
ID  - scholars13390
N2  - This study proposes the High-κ dielectric Trench Shielded power UMOSFET (HK TS-UMOSFET) to be assessed using the two-dimensional numerical simulations. The simulations are employed to evaluate HK TS-UMOSFETs susceptibility to single-event burnout (SEB) mechanism. Based on the findings, the influence of alternative high permittivity gate dielectrics to silicon dioxide (SiO 2) in TS-UMOSFET was discussed. Furthermore, in order to improve the performance of the device, its electrical behaviour was simulated with several high-κ dielectrics including Al 2 O 3, Si 3 N 4 and Aluminium Nitride (AlN). When heavy ions strike the sensitive areas of the device, the electric field distribution and SEB threshold values were extracted. Based on the values yielded, (AlN) was identified as a promising high-κ material to achieve SEB-hardened TS-UMOSFET compared to the other high-κ dielectrics. In conclusion, with (AlN), the HK TS-UMOSFET offers a high SEB tolerance and improved electrical characteristics. © 2020 The Author(s). Published by IOP Publishing Ltd.
IS  - 3
N1  - cited By 2
AV  - none
ER  -