%D 2020
%V 313
%T Surface acoustic wave modes characteristics of CMOS compatible SiO2/AlN/SiO2/Si multilayer structure with embedded electrodes
%O cited By 4
%R 10.1016/j.sna.2020.112202
%L scholars12693
%I Elsevier B.V.
%A M.Z. Aslam
%A V. Jeoti
%A S. Karuppanan
%A M.S. Pandian
%A E.M. Ferrer
%A K. Suresh
%X In this work, a CMOS compatible surface acoustic wave (SAW) device has been simulated and analyzed on SiO2/AlN/SiO2/Si. The simulation results have been used to characterize a typical fabricated device as well. The phase velocity, coupling coefficient, and temperature coefficient of frequency (TCF) of surface acoustic waves in the proposed structure have been investigated using the finite-element (FE) simulation. The simulation results show that a high velocity and a large effective coupling factor can be simultaneously obtained. Besides, the excellent nearly zero TCF is also achieved. The analysis further shows potential for designing high-frequency SAW devices that are CMOS compatible and temperature stable utilizing the Sezawa wave mode. © 2020 Elsevier B.V.
%J Sensors and Actuators, A: Physical
%K Acoustic surface wave devices; CMOS integrated circuits; Silica; Silicon; Temperature, Coupling coefficient; Embedded electrodes; Fabricated device; Finite element simulations; Multilayer structures; Surface acoustic waves; Temperature coefficient of frequencies; Temperature stable, Acoustic waves