TY  - JOUR
AV  - none
KW  - Acoustic surface wave devices; CMOS integrated circuits; Silica; Silicon; Temperature
KW  -  Coupling coefficient; Embedded electrodes; Fabricated device; Finite element simulations; Multilayer structures; Surface acoustic waves; Temperature coefficient of frequencies; Temperature stable
KW  -  Acoustic waves
ID  - scholars12693
TI  - Surface acoustic wave modes characteristics of CMOS compatible SiO2/AlN/SiO2/Si multilayer structure with embedded electrodes
N1  - cited By 4
N2  - In this work, a CMOS compatible surface acoustic wave (SAW) device has been simulated and analyzed on SiO2/AlN/SiO2/Si. The simulation results have been used to characterize a typical fabricated device as well. The phase velocity, coupling coefficient, and temperature coefficient of frequency (TCF) of surface acoustic waves in the proposed structure have been investigated using the finite-element (FE) simulation. The simulation results show that a high velocity and a large effective coupling factor can be simultaneously obtained. Besides, the excellent nearly zero TCF is also achieved. The analysis further shows potential for designing high-frequency SAW devices that are CMOS compatible and temperature stable utilizing the Sezawa wave mode. © 2020 Elsevier B.V.
SN  - 09244247
PB  - Elsevier B.V.
Y1  - 2020///
VL  - 313
UR  - https://www.scopus.com/inward/record.uri?eid=2-s2.0-85088260385&doi=10.1016%2fj.sna.2020.112202&partnerID=40&md5=b47de403ee17ece178370963e4f8e3ae
JF  - Sensors and Actuators, A: Physical
A1  - Aslam, M.Z.
A1  - Jeoti, V.
A1  - Karuppanan, S.
A1  - Pandian, M.S.
A1  - Ferrer, E.M.
A1  - Suresh, K.
ER  -