relation: https://khub.utp.edu.my/scholars/12693/
title: Surface acoustic wave modes characteristics of CMOS compatible SiO2/AlN/SiO2/Si multilayer structure with embedded electrodes
creator: Aslam, M.Z.
creator: Jeoti, V.
creator: Karuppanan, S.
creator: Pandian, M.S.
creator: Ferrer, E.M.
creator: Suresh, K.
description: In this work, a CMOS compatible surface acoustic wave (SAW) device has been simulated and analyzed on SiO2/AlN/SiO2/Si. The simulation results have been used to characterize a typical fabricated device as well. The phase velocity, coupling coefficient, and temperature coefficient of frequency (TCF) of surface acoustic waves in the proposed structure have been investigated using the finite-element (FE) simulation. The simulation results show that a high velocity and a large effective coupling factor can be simultaneously obtained. Besides, the excellent nearly zero TCF is also achieved. The analysis further shows potential for designing high-frequency SAW devices that are CMOS compatible and temperature stable utilizing the Sezawa wave mode. © 2020 Elsevier B.V.
publisher: Elsevier B.V.
date: 2020
type: Article
type: PeerReviewed
identifier:   Aslam, M.Z. and Jeoti, V. and Karuppanan, S. and Pandian, M.S. and Ferrer, E.M. and Suresh, K.  (2020) Surface acoustic wave modes characteristics of CMOS compatible SiO2/AlN/SiO2/Si multilayer structure with embedded electrodes.  Sensors and Actuators, A: Physical, 313.   ISSN 09244247     
relation: https://www.scopus.com/inward/record.uri?eid=2-s2.0-85088260385&doi=10.1016%2fj.sna.2020.112202&partnerID=40&md5=b47de403ee17ece178370963e4f8e3ae
relation: 10.1016/j.sna.2020.112202
identifier: 10.1016/j.sna.2020.112202