@article{scholars12693,
           title = {Surface acoustic wave modes characteristics of CMOS compatible SiO2/AlN/SiO2/Si multilayer structure with embedded electrodes},
       publisher = {Elsevier B.V.},
         journal = {Sensors and Actuators, A: Physical},
          volume = {313},
            note = {cited By 4},
             doi = {10.1016/j.sna.2020.112202},
            year = {2020},
            issn = {09244247},
          author = {Aslam, M. Z. and Jeoti, V. and Karuppanan, S. and Pandian, M. S. and Ferrer, E. M. and Suresh, K.},
        keywords = {Acoustic surface wave devices; CMOS integrated circuits; Silica; Silicon; Temperature, Coupling coefficient; Embedded electrodes; Fabricated device; Finite element simulations; Multilayer structures; Surface acoustic waves; Temperature coefficient of frequencies; Temperature stable, Acoustic waves},
             url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-85088260385&doi=10.1016\%2fj.sna.2020.112202&partnerID=40&md5=b47de403ee17ece178370963e4f8e3ae},
        abstract = {In this work, a CMOS compatible surface acoustic wave (SAW) device has been simulated and analyzed on SiO2/AlN/SiO2/Si. The simulation results have been used to characterize a typical fabricated device as well. The phase velocity, coupling coefficient, and temperature coefficient of frequency (TCF) of surface acoustic waves in the proposed structure have been investigated using the finite-element (FE) simulation. The simulation results show that a high velocity and a large effective coupling factor can be simultaneously obtained. Besides, the excellent nearly zero TCF is also achieved. The analysis further shows potential for designing high-frequency SAW devices that are CMOS compatible and temperature stable utilizing the Sezawa wave mode. {\^A}{\copyright} 2020 Elsevier B.V.}
}