@article{scholars12591,
         journal = {Environmental Chemistry Letters},
       publisher = {Springer Science and Business Media Deutschland GmbH},
           pages = {1779--1801},
            year = {2020},
           title = {BiVO4 photocatalysis design and applications to oxygen{\^A} production{\^A} and degradation of organic compounds: a review},
          volume = {18},
            note = {cited By 82},
          number = {6},
             doi = {10.1007/s10311-020-01039-0},
        abstract = {Bismuth vanadate, BiVO4, is a visible-light response semiconductor for photocatalysis applications such as organic pollutants degradation, oxygen production and carbon dioxide reduction. However, as a single-phase photocatalyst, BiVO4 efficiency is limited by{\^A} the unpreferable recombination of the photoexcited electron (e{\^a}??) and hole (h+). Thus, strategies have been designed to enhance the{\^A} photocatalytic efficiency by promoting the separation of electrons and holes. This can be done by controling the morphology and crystallographic facets of BiVO4, and by building p{\^a}??n junction photocatalytic systems with a combination of n-type semiconductors (BiVO4) and p-type semiconductors or a monoclinic{\^a}??tetragonal heterostructure of BiVO4. In particular, a direct p{\^a}??n junction photocatalytic system with tetragonal zircon-structured BiVO4 (t-z) and monoclinic scheelite-structured BiVO4 (m-s) combination has recently attracted attention. Here we review the synthesis of the{\^A} monoclinic{\^a}??tetragonal heterostructured BiVO4 photocatalyst (m{\^a}??t BiVO4) by calcination, hydrothermal, microwave-assisted hydrothermal and solvothermal methods. m{\^a}??t BiVO4 formation and the transmission phase between t-z and m-s are controlled by the calcining temperature, precursor pH, metal doping content, type of solvent, implementation of precursors and reaction conditions. We discuss m{\^a}??t BiVO4 crystal structure, optical characteristics and photocatalytic principles. Successful formation of BiVO4 crystals with a m-s/t-z heterostructure is based on data from X-ray diffraction (XRD), Raman and ultraviolet{\^a}??visible diffuse reflectance spectroscopy (UV{\^a}??Vis DRS). In the m{\^a}??t BiVO4 heterostructure, a direct p{\^a}??n junction photocatalytic system is established. When this system is exposed to visible light, the electrons in the conduction band of m-s BiVO4, a n-type semiconductor, migrate easily to the conduction band of t-z BiVO4, while the holes on valence band of t-z BiVO4, a p-type semiconductor, move to the valence band of m-s BiVO4 through an internal electric field. As a result, the e{\^a}??/h+ charge carriers are spatially separated. {\^A}{\copyright} 2020, Springer Nature Switzerland AG.},
             url = {https://www.scopus.com/inward/record.uri?eid=2-s2.0-85087049337&doi=10.1007\%2fs10311-020-01039-0&partnerID=40&md5=27e0834648ab5824fa2f3fd8c4e4fdea},
            issn = {16103653},
          author = {Nguyen, T. D. and Nguyen, V.-H. and Nanda, S. and Vo, D.-V. N. and Nguyen, V. H. and Van Tran, T. and Nong, L. X. and Nguyen, T. T. and Bach, L.-G. and Abdullah, B. and Hong, S.-S. and Van Nguyen, T.}
}