TY  - CONF
UR  - https://www.scopus.com/inward/record.uri?eid=2-s2.0-85100568647&doi=10.1109%2fPECon48942.2020.9314508&partnerID=40&md5=855f05c642f63589fed6956238ce151c
AV  - none
N2  - In this work, TCAD simulation has been applied to study the Power U- shape metal-oxide-semiconductor field- effect transistor (P-island Power UMOSFET) with p-type islands to determine its sensitivity to Single Event Burnout (SEB). In the drift area, the p-type buried islands suppress the strong electric field at the bottom of the trench and prevent SEB. For the appropriate device design, the effect of doping concentration, thickness, length, and position of the p-islands on the breakdown voltage and the threshold voltage is studied. Using optimized parameters for the P-island, the hardened PI-UMOS obtains unchanged electrical characteristics from the standard UMOSFET. The outcome of the SEB simulations shows that the electrical field in the hardened structure is decreased by 60.12 relative to a standard structure and that the survivability of the SEB has also improved substantially by about 30.1. Hence, Power UMOSFET with P-islands offers high SEB survivability for space and atmospheric applications. © 2020 IEEE.
PB  - Institute of Electrical and Electronics Engineers Inc.
N1  - cited By 0; Conference of 8th IEEE International Conference on Power and Energy, PECon 2020 ; Conference Date: 7 December 2020 Through 8 December 2020; Conference Code:166500
KW  - Electric fields; Hardening; Metals; MOS devices; MOSFET devices; Oxide semiconductors; Semiconductor doping; Threshold voltage
KW  -  Atmospheric applications; Effect of doping; Electrical characteristic; Electrical field; Optimized parameter; Simulation studies; Single-event burnouts; Strong electric fields
KW  -  Radiation hardening
SP  - 77
ID  - scholars12362
SN  - 9781728170688
TI  - Simulation study of single event burnout hardening technique on power UMOSFET using P-Island layer
Y1  - 2020///
EP  - 82
A1  - Krishnamurthy, S.
A1  - Kannan, R.
A1  - Azmadi Hussin, F.
ER  -