eprintid: 1220 rev_number: 2 eprint_status: archive userid: 1 dir: disk0/00/00/12/20 datestamp: 2023-11-09 15:49:22 lastmod: 2023-11-09 15:49:22 status_changed: 2023-11-09 15:39:15 type: article metadata_visibility: show creators_name: Abdelbagi, S. creators_name: Ellis, G.A. title: Study on the effects of variation in line width on the planar spiral inductors on GaAs ispublished: pub keywords: Circuit model parameters; Circuit models; Planar spiral inductor; Process Variation; Process variations, Computer simulation; Curve fitting; Electric inductors; Gallium alloys; Gallium arsenide; Optimization; Scattering parameters; Semiconducting gallium, Integrated circuit manufacture note: cited By 0 abstract: In this article, the effects of process variations on the circuit model parameters of planar rectangular spiral inductor implemented using Gallium Arsenide (GaAs) technology are presented. The effects of variation in line width on the inductor circuit model parameters are investigated using electromagnetic simulation. Simple formulas to account for these effects using curve fitting are proposed. This is advantageous to the circuit designer in that the nominal inductor models can be easily modified to account for these variations and can be helpful during circuit design optimization. © 2010 Wiley Periodicals, Inc. date: 2010 official_url: https://www.scopus.com/inward/record.uri?eid=2-s2.0-77954544442&doi=10.1002%2fmmce.20451&partnerID=40&md5=0b6ee49d77c43617c580b6f4ee88a313 id_number: 10.1002/mmce.20451 full_text_status: none publication: International Journal of RF and Microwave Computer-Aided Engineering volume: 20 number: 4 pagerange: 458-464 refereed: TRUE issn: 10964290 citation: Abdelbagi, S. and Ellis, G.A. (2010) Study on the effects of variation in line width on the planar spiral inductors on GaAs. International Journal of RF and Microwave Computer-Aided Engineering, 20 (4). pp. 458-464. ISSN 10964290