eprintid: 11414
rev_number: 2
eprint_status: archive
userid: 1
dir: disk0/00/01/14/14
datestamp: 2023-11-10 03:25:55
lastmod: 2023-11-10 03:25:55
status_changed: 2023-11-10 01:15:12
type: conference_item
metadata_visibility: show
creators_name: Krishnamurthy, S.
creators_name: Kannan, R.
creators_name: Hussin, F.A.
creators_name: Yahya, E.A.
title: Enhanced Trench Shielded Power UMOSFET for Single Event Burnout Hardening
ispublished: pub
keywords: Buffer layers; Electric fields; Hardening; Nanoelectronics; Radiation hardening, ATLAS software; Atmospheric applications; Electrical characteristic; MOSFET structures; N-buffer layers; Power UMOSFET; Silvaco; Single-event burnouts, Power MOSFET
note: cited By 7; Conference of 2019 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2019 ; Conference Date: 21 August 2019 Through 23 August 2019; Conference Code:156451
abstract: An enhanced structure for Single-Event Burnout (SEB) hardening in trench gate shielded power UMOSFET is presented in this work. The proposed power MOSFET structure includes an n-type region wrapping p+ shielded region underneath the gate trench and adds an n-buffer layer between the epitaxial layer and substrate. With SILVACO ATLAS software, the standard and hardened UMOSFET are investigated to prove that the added n-region spreads out the electrons to the downward direction and the buffer layer could provide a leaking path of hole current and improve the device's tolerance to single-event burnout. The simulation results show that the electric field in the hardened structure is reduced when compared to a standard structure, and the SEB survivability also increased significantly. Meanwhile, there is no impact on the enhanced electrical characteristics namely threshold and breakdown voltages. Hence, for space and atmospheric applications, this power MOSFET provides high SEB survivability. © 2019 IEEE.
date: 2019
publisher: Institute of Electrical and Electronics Engineers Inc.
official_url: https://www.scopus.com/inward/record.uri?eid=2-s2.0-85078311992&doi=10.1109%2fRSM46715.2019.8943495&partnerID=40&md5=7c8ac635c0f811653efb271a9f089524
id_number: 10.1109/RSM46715.2019.8943495
full_text_status: none
publication: Proceedings of the 2019 IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2019
pagerange: 91-94
refereed: TRUE
isbn: 9781728104591
citation:   Krishnamurthy, S. and Kannan, R. and Hussin, F.A. and Yahya, E.A.  (2019) Enhanced Trench Shielded Power UMOSFET for Single Event Burnout Hardening.  In: UNSPECIFIED.