eprintid: 11412
rev_number: 2
eprint_status: archive
userid: 1
dir: disk0/00/01/14/12
datestamp: 2023-11-10 03:25:55
lastmod: 2023-11-10 03:25:55
status_changed: 2023-11-10 01:15:12
type: conference_item
metadata_visibility: show
creators_name: Aslam, M.Z.
creators_name: Jeoti, V.
creators_name: Karuppanan, S.
creators_name: Chand, A.
title: PZT based multilayer surface acoustic wave device for high frequency applications
ispublished: pub
keywords: Acoustic surface wave devices; Acoustic wave propagation; Film preparation; Finite element method; Multilayers; Nanotechnology; Silica; Temperature, Finite element method simulation; High-frequency applications; Multilayer surfaces; Rayleigh; Sezawa; Surface acoustic waves; Temperature coefficient of frequencies; Temperature stable, Acoustic waves
note: cited By 0; Conference of 9th IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale, 3M-NANO 2019 ; Conference Date: 4 August 2019 Through 8 August 2019; Conference Code:156625
abstract: This paper presents a study on the integration of PZT thin film on SiO2/Si substrate, which offers a great deal of potential in high frequency applications. A finite element method (FEM) simulation analysis of the proposed PZT/SiO2/Si multilayer surface acoustic wave device is performed, and two propagation modes are studied i.e. the Rayleigh and Sezawa wave mode. The proposed structure is optimized by PZT (tPZT) and SiO2 (tSiO2) layers thicknesses. The Rayleigh mode is optimized with k2=6.27 at tPZT/λ=0.4 and tSiO2/λ=0.025 and the Sezawa mode with k2 =13.13 at tPZT/λ =0.2 and tSiO2/λ=0.025. The temperature coefficient of frequency of the Sezawa mode is 2.7 times lower than that of the Rayleigh mode. Which makes it a more suitable choice for temperature stable high frequency and high k2 SAW devices. © 2019 IEEE.
date: 2019
publisher: Institute of Electrical and Electronics Engineers Inc.
official_url: https://www.scopus.com/inward/record.uri?eid=2-s2.0-85078841296&doi=10.1109%2f3M-NANO46308.2019.8947348&partnerID=40&md5=f14dc3ee78b39ab806b38116e604afdd
id_number: 10.1109/3M-NANO46308.2019.8947348
full_text_status: none
publication: 2019 IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale, 3M-NANO 2019 - Proceedings
pagerange: 266-269
refereed: TRUE
isbn: 9781728102054
citation:   Aslam, M.Z. and Jeoti, V. and Karuppanan, S. and Chand, A.  (2019) PZT based multilayer surface acoustic wave device for high frequency applications.  In: UNSPECIFIED.