TY - CONF KW - Acoustic surface wave devices; Acoustic wave propagation; Film preparation; Finite element method; Multilayers; Nanotechnology; Silica; Temperature KW - Finite element method simulation; High-frequency applications; Multilayer surfaces; Rayleigh; Sezawa; Surface acoustic waves; Temperature coefficient of frequencies; Temperature stable KW - Acoustic waves SP - 266 TI - PZT based multilayer surface acoustic wave device for high frequency applications ID - scholars11412 N1 - cited By 0; Conference of 9th IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale, 3M-NANO 2019 ; Conference Date: 4 August 2019 Through 8 August 2019; Conference Code:156625 N2 - This paper presents a study on the integration of PZT thin film on SiO2/Si substrate, which offers a great deal of potential in high frequency applications. A finite element method (FEM) simulation analysis of the proposed PZT/SiO2/Si multilayer surface acoustic wave device is performed, and two propagation modes are studied i.e. the Rayleigh and Sezawa wave mode. The proposed structure is optimized by PZT (tPZT) and SiO2 (tSiO2) layers thicknesses. The Rayleigh mode is optimized with k2=6.27 at tPZT/λ=0.4 and tSiO2/λ=0.025 and the Sezawa mode with k2 =13.13 at tPZT/λ =0.2 and tSiO2/λ=0.025. The temperature coefficient of frequency of the Sezawa mode is 2.7 times lower than that of the Rayleigh mode. Which makes it a more suitable choice for temperature stable high frequency and high k2 SAW devices. © 2019 IEEE. AV - none EP - 269 UR - https://www.scopus.com/inward/record.uri?eid=2-s2.0-85078841296&doi=10.1109%2f3M-NANO46308.2019.8947348&partnerID=40&md5=f14dc3ee78b39ab806b38116e604afdd A1 - Aslam, M.Z. A1 - Jeoti, V. A1 - Karuppanan, S. A1 - Chand, A. SN - 9781728102054 PB - Institute of Electrical and Electronics Engineers Inc. Y1 - 2019/// ER -