eprintid: 10283
rev_number: 2
eprint_status: archive
userid: 1
dir: disk0/00/01/02/83
datestamp: 2023-11-09 16:36:54
lastmod: 2023-11-09 16:36:54
status_changed: 2023-11-09 16:31:02
type: article
metadata_visibility: show
creators_name: Amiri, I.S.
creators_name: Ariannejad, M.M.
creators_name: Azzuhri, S.R.B.
creators_name: Anwar, T.
creators_name: Kouhdaragh, V.
creators_name: Yupapin, P.
title: Vertical Ge photodetector base on InP taper waveguide
ispublished: pub
note: cited By 6
abstract: In this work, simulation is conducted to investigate Ge photodetectors monolithically integrated on Si chip. The performance of vertical Germanium photodetector with FDTD Solutions (optical simulation) and electrical simulation has been studied. Selective heteroepitaxy of Ge is functioned in the monolithic integration of Ge photodetectors. The potential of CMOS-compatible monolithic integration of Ge as photodetector is investigated and the performance optimization is presented. Additionally, the investigation is extended to electrical part, particularly in the conversion efficiency as well as operation under low supplied voltage condition. © 2018 The Authors
date: 2018
publisher: Elsevier B.V.
official_url: https://www.scopus.com/inward/record.uri?eid=2-s2.0-85044135463&doi=10.1016%2fj.rinp.2018.03.014&partnerID=40&md5=b8ccdc855694a7c85ed77aec14fd4474
id_number: 10.1016/j.rinp.2018.03.014
full_text_status: none
publication: Results in Physics
volume: 9
pagerange: 576-579
refereed: TRUE
issn: 22113797
citation:   Amiri, I.S. and Ariannejad, M.M. and Azzuhri, S.R.B. and Anwar, T. and Kouhdaragh, V. and Yupapin, P.  (2018) Vertical Ge photodetector base on InP taper waveguide.  Results in Physics, 9.  pp. 576-579.  ISSN 22113797