TY  - JOUR
AV  - none
N2  - In this work, simulation is conducted to investigate Ge photodetectors monolithically integrated on Si chip. The performance of vertical Germanium photodetector with FDTD Solutions (optical simulation) and electrical simulation has been studied. Selective heteroepitaxy of Ge is functioned in the monolithic integration of Ge photodetectors. The potential of CMOS-compatible monolithic integration of Ge as photodetector is investigated and the performance optimization is presented. Additionally, the investigation is extended to electrical part, particularly in the conversion efficiency as well as operation under low supplied voltage condition. © 2018 The Authors
N1  - cited By 6
ID  - scholars10283
SP  - 576
TI  - Vertical Ge photodetector base on InP taper waveguide
Y1  - 2018///
SN  - 22113797
PB  - Elsevier B.V.
UR  - https://www.scopus.com/inward/record.uri?eid=2-s2.0-85044135463&doi=10.1016%2fj.rinp.2018.03.014&partnerID=40&md5=b8ccdc855694a7c85ed77aec14fd4474
JF  - Results in Physics
A1  - Amiri, I.S.
A1  - Ariannejad, M.M.
A1  - Azzuhri, S.R.B.
A1  - Anwar, T.
A1  - Kouhdaragh, V.
A1  - Yupapin, P.
VL  - 9
EP  - 579
ER  -