TY  - CONF
SP  - 584
N1  - cited By 6; Conference of 2010 International Conference on Mechanical and Electrical Technology, ICMET 2010 ; Conference Date: 10 September 2010 Through 12 September 2010; Conference Code:82383
KW  - CMOS technology; CoventorWare; Design and simulation; Earth's magnetic field; External magnetic field; Lorentz; Mechanical behavior; MEMS resonator; Micromachined devices; Piezo-resistive; Piezoresistive sensing; Quality factors; Resonant frequencies; Resonant magnetic field sensors; Sensor response; Simulation software; Small devices; Static and dynamic
KW  -  CMOS integrated circuits; Composite micromechanics; Computer software; Dynamics; Lorentz force; Magnetic sensors; Magnetism; Microelectromechanical devices; Natural frequencies; Resonators; Sensitivity analysis; Surface micromachining; Technology
KW  -  Magnetic field effects
A1  - Ahmad, F.
A1  - Dennis, J.O.
A1  - Hamid, N.H.
A1  - Khir, M.H.M.
EP  - 587
Y1  - 2010///
SN  - 9781424481019
TI  - Design and simulation of mechanical behavior of MEMS-based resonant magnetic field sensor with piezoresistive output
ID  - scholars1021
AV  - none
UR  - https://www.scopus.com/inward/record.uri?eid=2-s2.0-78649279347&doi=10.1109%2fICMET.2010.5598428&partnerID=40&md5=f011a1531c88587d7ae9e6ad5c3ea73a
CY  - Singapore
N2  - This study scopes in the application of Lorentz force for the magnetic field detection using micromachined device. The device is designed and simulated using CoventorWare simulation software. The design is based on CMOS technology and surface micromachining. The response of the device in external magnetic field is discussed in two situations: static and dynamic. It was observed in static case a displacement of 47.4 nm, while for the dynamic case it was 0.237 μm in the center of beam. The device has a resonant frequency of 66.64 MHz and a quality factor 6 with important features such as small device size. Earth's magnetic field is used as source of actuation and sensor response towards the variation in external magnetic field is 99.9  linear with sensitivity of 0.05 μA/μT. © 2010 IEEE.
ER  -