UWB CMOS low noise amplifier for mode 1

Zulkifli, T.Z.A. and Marzuki, A. and Murad, S.A.Z. (2017) UWB CMOS low noise amplifier for mode 1. In: UNSPECIFIED.

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Abstract

This paper presents an ultra-wideband 3.1-4.9 GHz low noise amplifier (LNA) employing a sixth-order bandpass Chebyshev filter. The LNA has been designed using Silterra 0.18 μm CMOS technology at 1.8 V power supply. The simulation shows that the LNA attains a power gain of 14.1 dB with an input reflection coefficient less than -10 dB in frequency range of interest, a noise figure of 4.29 dB at 3.8 GHz, gain flatness of ±0.25 dB, a 1 dB compression point of -17.67 dBm, -6.90 dBm for IIP3 and power dissipation of 4.5 mW excluding the buffer stage. © 2017 IEEE.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Additional Information: cited By 3; Conference of 2017 IEEE Asia Pacific Conference on Postgraduate Research in Microelectronics and Electronics, PrimeAsia 2017 ; Conference Date: 31 October 2017 Through 2 November 2017; Conference Code:134541
Uncontrolled Keywords: Bandpass filters; Broadband amplifiers; Chebyshev filters; CMOS integrated circuits; Noise figure; Ultra-wideband (UWB), 0.18-μm CMOS; Band pass; Chebyshev's filter; CMOS low noise amplifiers; CMOS technology; Inductive degeneration; Inductive degeneration low noise amplifier; Low noiseamplifier; Sixth-order chebyshev filter; Ultrawide band, Low noise amplifiers
Depositing User: Mr Ahmad Suhairi UTP
Date Deposited: 09 Nov 2023 16:20
Last Modified: 09 Nov 2023 16:20
URI: https://khub.utp.edu.my/scholars/id/eprint/8536

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