Ahmed, A.Y. and Rabih, A.A.S. and Khir, M.H.M. and Basuwaqi, A.M.A. and Dennis, J.O. (2017) Theoretical modeling and FEA simulation of a CMOS-MEMS resonator. In: UNSPECIFIED.
Full text not available from this repository.Abstract
Relative humidity sensing is crucial in many applications. However, hysteresis, lack of stability and low accuracy still exist in some of the available humidity sensors. This paper studies the effect of changing the supported beams' length and width on the resonance frequency and mass sensitivity of a CMOS-MEMS resonator proposed for relative humidity sensing applications. The resonator is designed based on 0.35 μm CMOS technology. The resonance frequency and mass sensitivity were found to be in a range of 6.195 kHz-17.852 kHz and 1.498 mHz/pg-4.301 mHz/pg, respectively, when the length of the beams was changed from 500 μm to 300 μm, while decreasing the beams' width was found to decrease the resonance frequency and subsequently the mass sensitivity. FEA simulation using 2008 CoventorWare software was used to confirm the analytical results, in which the analytical and simulation results of frequencies and mass sensitivities showed good agreement within a percentage error of 0.80 for both of them. © 2017 IEEE.
Item Type: | Conference or Workshop Item (UNSPECIFIED) |
---|---|
Additional Information: | cited By 1; Conference of 11th IEEE Regional Symposium on Micro and Nanoelectronics, RSM 2017 ; Conference Date: 23 August 2017 Through 25 August 2017; Conference Code:131360 |
Uncontrolled Keywords: | Computer software; Finite element method; Humidity sensors; Microelectromechanical devices; Nanoelectronics; Natural frequencies; Resonance; Resonators, Analytical results; CMOS technology; CMOS-MEMS; Humidity sensing; Mass sensitivity; Percentage error; Resonance frequencies; Theoretical modeling, CMOS integrated circuits |
Depositing User: | Mr Ahmad Suhairi UTP |
Date Deposited: | 09 Nov 2023 16:20 |
Last Modified: | 09 Nov 2023 16:20 |
URI: | https://khub.utp.edu.my/scholars/id/eprint/8292 |