Tabe, M. and Burhanudin, Z.A. and Nuryadi, R. and Moraru, D. and Ligowski, M. and Jablonski, R. and Mizuno, T. (2008) Si single-electron SOI-MOSFETs: Interplay with individual dopants and photons. In: UNSPECIFIED.
Full text not available from this repository.Abstract
We have demonstrated that Si single-electron or single-hole SOI-MOSFETs with the multi-dots channel have attractive new functions such as photon detection and single-electron transfer. Multi-dots formed by selective-oxidation-induced patterning of the thin SOI layer have been used in the experiments of photon detection, while, most recently, we have utilized smaller dots consisting of individual dopant potentials in single electron transfer devices. Furthermore, in order to directly observe spatial landscape of single charges in the channel region, we have developed Low Temperature-Kelvin Probe Force Microscopy and succeeded in detecting single-dopant potential in the channel region. In this paper, photon detection by these devices will be primarily described. © 2009 Materials Research Society.
Item Type: | Conference or Workshop Item (UNSPECIFIED) |
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Additional Information: | cited By 0; Conference of 2008 MRS Fall Meeting ; Conference Date: 1 December 2008 Through 5 December 2008; Conference Code:79778 |
Uncontrolled Keywords: | Electron transitions; MOSFET devices; Photodetectors; Silicon; Temperature, Channel region; Kelvin probe force microscopy; Low temperatures; New functions; Photon detection; Selective oxidation; Single electron; Single electron transfer, Photons |
Depositing User: | Mr Ahmad Suhairi UTP |
Date Deposited: | 09 Nov 2023 15:16 |
Last Modified: | 09 Nov 2023 15:16 |
URI: | https://khub.utp.edu.my/scholars/id/eprint/497 |