Dimensions
DimensionsAhmad, F. and Dennis, J.O. and Md Khir, M.H. and Hamid, N.H. (2012) A CMOS MEMS resonant magnetic field sensor with differential electrostatic actuation and capacitive sensing. Advanced Materials Research, 403-40. pp. 4205-4209. ISSN 10226680
Full text not available from this repository.Abstract
This paper is about CMOS MEMS resonant magnetic field sensor in which differential electrostatic actuation, capacitive sensing, resonant frequency, quality factor and sensitivity of interdigitated comb resonator is investigated. Information is embedded in the output signal frequency because it is robust against the interference from other sources during transmission. At damping ratio of 0.0001, resonant frequency of the comb resonator is 4.35 kHz with quality factor 5000 and amplitude 18.45 μm. Sensitivity of the device towards external magnetic field is 9.455 mHz/nT which is 10,000 times improved than recently published data. © (2012) Trans Tech Publications, Switzerland.
| Item Type: | Article |
|---|---|
| Additional Information: | cited By 5; Conference of 2011 7th International Conference on MEMS, NANO and Smart Systems, ICMENS 2011 ; Conference Date: 4 November 2011 Through 6 November 2011; Conference Code:87709 |
| Uncontrolled Keywords: | Capacitive sensing; CMOS-MEMS; Comb resonator; Comb-drive actuator; Damping ratio; Deep reactive ion etching; Electrostatic actuation; External magnetic field; Output signal; Quality factors; Resonant magnetic field sensors, Electrostatic actuators; Electrostatics; Magnetic fields; Magnetic sensors; Magnetometers; Microelectromechanical devices; Natural frequencies; Resonators, Reactive ion etching |
| Depositing User: | Mr Ahmad Suhairi UTP |
| Date Deposited: | 09 Nov 2023 15:51 |
| Last Modified: | 09 Nov 2023 15:51 |
| URI: | https://khub.utp.edu.my/scholars/id/eprint/3221 |
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