Modeling and microfabrication of a CMOS resonator for magnetic field measurement

Ahmad, F. and Dennis, J.O. and Khir, M.H.M. and Hamid, N.H. (2012) Modeling and microfabrication of a CMOS resonator for magnetic field measurement. In: UNSPECIFIED.

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Abstract

This paper presents the modeling and microfabrication of a CMOS resonant magnetic field sensor capable of measuring magnetic field in the range of nanotesla. This sensor is based on differential electrostatic along with Lorentz force actuation and piezoresistive sensing. Cadence virtuoso layout is used to design the resonant magnetic sensor for fabrication. Using microfabrication facilities of MIMOS Bhd all CMOS layers i.e. three metal and two poly layers are used to fabricate the magnetic sensor to enhance the sensitivity. At sensor output, without any amplification its sensitivity is 1.4807 μV/μT at 0.001 damping ratio with quality factor 500 and resonant frequency 9.35 kHz. © 2011 IEEE.

Item Type: Conference or Workshop Item (UNSPECIFIED)
Additional Information: cited By 1; Conference of 2012 4th International Conference on Intelligent and Advanced Systems, ICIAS 2012 ; Conference Date: 12 June 2012 Through 14 June 2012; Conference Code:93534
Uncontrolled Keywords: All CMOS; Damping ratio; Differential electrostatic actuators and PZR sensing; Force actuation; Interdigitated fingers; Lorentz; MEMS resonators; Piezoresistive sensing; Quality factors; Resonant magnetic field sensors; Sensor output, Electrostatic actuators; Lorentz force; Magnetic field measurement; Magnetic sensors; Microelectromechanical devices; Microfabrication; Natural frequencies, Microanalysis
Depositing User: Mr Ahmad Suhairi UTP
Date Deposited: 09 Nov 2023 15:50
Last Modified: 09 Nov 2023 15:50
URI: https://khub.utp.edu.my/scholars/id/eprint/2722

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