This paper covers the modeling and layout design of CMOS resonant lateral comb magnetic sensor capable of measuring magnetic field in the nanotesla range. The actuation mechanism of this sensor is based on differential electrostatic along with Lorentz force and sensing is piezoresistive. Cadence virtuoso is used to create the layout of resonant magnetic sensor according to design rules of MIMOS Bhd. All CMOS layers i.e. three metal and two poly layers are used in the structure to fabricate the magnetic sensor to enhance the sensitivity. At sensor output, without any amplification its sensitivity is 1.4807 μV/μT at 0.001 damping ratio with quality factor 500 and resonant frequency 9.35 kHz. © 2012 IFSA.