A basic memory cell of SRAM topology consists of four transistors which act as a flip flop and two more transistors will act as pass transistor. In this study, experiment is done by varying the values of different variables that can affect the performance of basic memory cell. Among the variables are magnitudes of voltage supply, temperature, clock frequency and process technology used in fabrication of memory cell. These variables will have their own limit due to the configuration of circuit and properties transistor parameters in the memory cell. These values will determine the performance of the memory cell. The studies are carried out using various process technologies by simulation at schematic level. The results show that higher clock frequency will require higher value of supplied voltage. Lower supplied voltage will make SRAM failed to operate at high temperature. Different process technology will also influence value for minimum supplied voltage used and range temperature that the SRAM circuit can operate properly. The process technology of hp14tb has the minimum supply voltage of 0.83 V at 5 MHz while ami16 has the widest effective range temperature from 229°C to 224°C at 100MHz and 1.3 V simulation. © 2011 IEEE.