The application of fullerene as a negative resist was first studied by Tada and Kanayama who verified that this material could be used as a negative electron beam resist. Its small molecule enables the resist to have a resolution of at least 20 nm. Robinson et al. demonstrated that chemical modification of C60 by adding functional groups to the C60 cage can significantly enhance the resist properties. Chemical amplification of the fullerene derivatives improves their sensitivities while maintaining their high resolution. In this chapter, the concepts of lithography and lithography techniques which include electron beam lithography technology systems are described. Current electron beam resists and their characteristics are discussed. A review of the application of fullerene and its derivatives as electron beam resists is presented. Finally, oncepts of chemical amplification and current chemically amplified resists are discussed. © Springer-Verlag Berlin Heidelberg 2010.