Air-stable perovskite photovoltaic cells with low temperature deposited NiOx as an efficient hole-transporting material Academic Article uri icon

abstract

  • The electron-beam physical vapor deposition (EBPVD) technique was selected for nickel oxide (NiOx) film deposition at room temperatures. NiOx film (18 nm thick) was deposited as a hole transporting material (HTM) for inverted perovskite solar cells (PSCs) onto a fluorine-doped tin oxide (FTO)-coated glass substrate at a chamber vacuum pressure of 4.6×104 Pa. PSCs were fabricated as a glass/FTO/NiOx(HTM)/CH3NH3PbI3/PC61BM/BCP/Ag structure with as-deposited and annealed (500 °C for 30 min) NiOx films. Under 100 mW cm-2 illumination, as-deposited and annealed NiOx as HTM in PSCs (0.16 cm2) showed a high-power conversion efficiency (PCE) of 13.20% and 13.24%, respectively. The as-deposited and annealed PSCs retained 72.2% and 76.96% of their initial efficiency in ambient conditions, correspondingly. This study highlights the possibility of achieving highly crystalline and finely disseminated NiOx films by EBPVD for fabricating efficient inverted PSCs.

authors

  • Mahmud Hasan, A. K.
  • Raifuku, Itaru
  • Amin, N.
  • Ishikawa, Yasuaki
  • Sarkar, D. K.
  • Sobayel, K.
  • Karim, Mohammad R.
  • Ul-Hamid, Anwar
  • Abdullah, H.
  • Shahiduzzaman, Md.
  • Uraoka, Yukiharu
  • Sopian, Kamaruzzaman
  • Akhtaruzzaman, Md.

publication date

  • 2020

start page

  • 1801

volume

  • 10

issue

  • 8