Optimization on Junction Formation by Three-Stack Furnace POCl3 Diffusion and Analysis on Solar Cell Performance Academic Article uri icon

abstract

  • The emitter formation parameters for high-efficiency and low cost crystalline silicon solar cells on p-type Si (100) with resistivity in 10-20 ohm range have been investigated. All experimental works performed in 8-inch diameter quartz process tube using liquid source POCl3 as the doping source. Process temperatures in the range 850 - 1000 C with drive-in time in 15 - 30 minutes at O2 flow rate of 4800 sccm were investigated. The starting material wafers were <100> oriented, 100-mm diameter, Cz mono-crystalline silicon wafers with 350-μm thickness, 0 - 10 Ohm-cm of resistivity. This process produces an emitter with a sheet resistance in the range from 20 Ω/sq to 100 Ω/sq as measured with a four point probe (FPP). In order to reduce surface defects, we have also investigated thermal oxidation of heavily-doped wafers to ensure better surface passivation.

authors

  • Cheow, Siu Leong
  • Salwa, Abdul Ghani Nurul
  • Khairy, M.Y.
  • Shahrul, Anizan W.
  • Amin, Nowshad
  • Sopian, Kamaruzzaman
  • Zaidi, Saleem H.

publication date

  • 2010

number of pages

  • 6

start page

  • 1053

end page

  • 1059

volume

  • 27

issue

  • 1