IEEE Transactions on Circuits and Systems I: Regular Papers Journal

publication venue for

Methodology of Statistical RTS Noise Analysis With Charge-Carrier Trapping Models. 57:1062-1070. 2010
Time-Domain Modeling of Low-Frequency Noise in Deep-Submicrometer MOSFET. 55:245-257. 2008

publisher

Institute of Electrical and Electronics Engineers (IEEE) Publisher

International Standard Serial Number (ISSN)

1549-8328
1558-0806