Effect of Cd2+Molar Concentration in CdxZn(1−x)S Thin Film by Chemical Bath Deposition Technique Using Alternative Sulfur Precursor Academic Article uri icon

abstract

  • Ternary semiconductor CdxZn(1−x)S thin films are prepared by chemical bath deposition (CBD) using N-methyl thiourea as an alternative sulfur precursor. Molar concentration of CdSO4has been varied from 0.01 M to 0.09 M during the fabrication process of CdxZn(1−x)S thin film. Effect of variation in Cd2+molar concentration on morphological, structural and opto-electrical properties of CdxZn(1−x)S thin film has been investigated. As grown films are found less crystalline and structural analysis suggests that CdxZn(1−x)S phase changes with the increase of Cd2+molar concentration. SEM images reveals that all the films exhibit granules-like morphology. Raman peak indicates that higher concentration of CdSO4precursor forms more CdS in the CdxZn(1−x)S. Bandgaps of CdxZn(1−x)S thin films are found to be ranged from 2.44 eV to 2.95 eV for different Cd2+molar concentrations in the CdxZn(1−x)S thin films. Resistivity and carrier mobility of as grown CdxZn(1−x)S films ranged from 14.2 × 103ohm-cm to 2.25 × 103ohm-cm and 4.31 cm2(V s)−1to 9.42 cm2(V s)−1, respectively. As all these findings affirms the credibility of using N-methyl thiourea as an alternative sulfur precursor for the development of CdxZn(1−x)S thin film by CBD process.

authors

  • Nurhafiza, K.
  • Chelvanathan, P.
  • Sobayel, K.
  • Munna, F. T.
  • Abdullah, Huda
  • Ibrahim, Mohd Adib
  • Techato, Kuaanan
  • Sopian, Kamaruzzaman
  • Amin, N.
  • Akhtaruzzaman, Md.

publication date

  • 2021

start page

  • 025009

volume

  • 10

issue

  • 2